Plasma-Photon MOCVD platform for wafer-scale 2D TMD growth below 450 °C
The NanoGalaxy PPMOCVD grows atomically uniform 2D transition-metal-dichalcogenide monolayers on full 300 mm wafers at CMOS back-end-of-line temperatures. ICP plasma activation lowers the precursor energy barrier while in-situ UV irradiation removes defects in real time — delivering production-grade material quality at 60 wafers per hour for monolithic 3D integration, advanced memory, and 1 nm-node logic.
<450 °CGrowth temperature
60 sMonolayer window
300 mmWafer size
60 /hrThroughput
Process Performance
Process parameters qualified for production-grade 2D TMD growth on 300 mm CMOS wafers.
Materials & Growth
Supported materials
MoS₂, WS₂, MoSe₂, WSe₂
Growth temperature
< 450 °C (adjustable)
Growth window
60 s per monolayer cycle
Monolayer growth rate
0.65 nm/min — atomic-level precision
Film uniformity
Atomic-level uniformity across full 300 mm wafer
Process gases
H₂, Ar, S(Se) source, Mo/W source
Plasma & UV Subsystems
ICP function
Precursor activation — lowers reaction energy barrier
UV function
In-situ, real-time defect removal during growth
Platform & Throughput
Architecture designed for high-volume manufacturing and continuous fab operation.
Equipment Configuration
Process chambers
4 independent chambers, parallel processing
Wafer size
12 inch (300 mm)
Max throughput
60 wafers/hr (4-chamber parallel)
Susceptor
Rotary — no center temperature dip
Chamber access
Lift-up lid for easy maintenance
Thermal & Facility
Heating method
Full-line SCR, 6 independent temperature zones
Temperature measurement
Dual-mode: thermocouple + IR camera
System power
~35 kW — three-phase AC 380 V, 50/60 Hz
Equipment footprint
4776 × 4615 × 1651 mm (W × D × H)
Service & Support
Committed to peak equipment performance through the tool's entire operational lifetime.
Parts Warranty
Coverage
5-year replacement of any parts
Upgrades
Lifecycle support
Continuous software & hardware iteration support
Process Support
Engineering support
1 on-site equipment engineer + 1 process engineer
Process scope
2D TMD CMOS and 3D monolithic integration flows
Target Applications
Production-ready material for next-generation semiconductor architectures.