NanoGalaxy™We grow semiconductors one atom thick, right on top of finished chips.
The 12-inch (300 mm) plasma-photon MOCVD platform that grows wafer-scale 2D TMD monolayers below 450 °C — ICP plasma and in-situ UV working in synergy for atomic-level uniformity across wafer-scale CMOS and pilot-line integration, heterogeneous stacking, and high-volume production.
A machine that grows semiconductors a few atoms thick.
MoS₂ films across full 300 mm wafers, cool enough to grow directly on finished chips.
60 sGrowth Windowfull monolayer cycle
0.65 nm/minMonolayer Rateatomic-level precision
<450 °CProcess TempCMOS BEOL compatible
60 /hrWafer Throughput4 chambers in parallel
Conventional CVD needs 750 °C to grow a usable monolayer — hot enough to destroy every transistor beneath it. NanoGalaxy grows the same crystal at 450 °C and below, directly on finished CMOS. Monolithic 3D stops being a roadmap slide and becomes a process recipe.
Core Technology
ICP + UV Synergy
Two complementary mechanisms work in tandem inside every chamber: plasma supplies the energy that temperature can't, and UV photons repair the lattice while it grows.
01ICP Plasma
Activate Precursors at Low Temperature
High-density inductively-coupled plasma activates precursors and lowers the reaction energy barrier — enabling high-quality 2D TMD growth below 450 °C without compromising material properties.
High-density RF plasma source
Lowers activation energy barrier
CMOS BEOL temperature-compatible
02UV Photons
Real-Time In-Situ Defect Removal
In-situ UV irradiation repairs defects in real time during growth, dramatically improving material quality, uniformity, and long-range crystalline order across the full 12-inch wafer.
In-situ UV illumination
In-situ defect passivation
Uniform treatment across 300 mm
03Result
Wafer-Scale 2D TMD Films
Atomically compact, defect-low, highly uniform transition-metal-dichalcogenide films — ready for advanced logic nodes, 3D monolithic stacking, and emerging memory.
MoS₂ · WS₂ · MoSe₂ · WSe₂
Defect-low, highly uniform films
Ready for 3D stacking integration
Deployment
One 12-Inch Platform, Pilot Line to Fab
The same 300 mm plasma-photon MOCVD system serves wafer-scale CMOS and pilot-line integration, heterogeneous stacking, and high-volume production.
4-chamber 300 mm production tool
Integration
Wafer-Scale CMOS & Pilot Lines
Grows uniformly across the full 300 mm wafer directly on finished CMOS at back-end-of-line temperature — a process qualified on a pilot line transfers into the fab on the same platform.
300 mm full-wafer uniformity
Runs on completed CMOS
Pilot line to production, one recipe
Stacking
Heterogeneous Stacking
Logic, memory and 2D channels grown tier-on-tier as a single monolithic stack — no wafer bonding, no through-silicon vias, and no alignment error between dissimilar device layers.
Monolithic tier-on-tier growth
No bonding, no TSVs
Dissimilar devices in one stack
Volume
High-Volume Production
Four independent chambers process in parallel at 60 wafers per hour, with a rotary susceptor and six-zone thermal control designed for continuous fab operation.
60 wafers/hr, 4 chambers parallel
Rotary susceptor, 6 thermal zones
Built for continuous fab duty
Datasheet
Equipment Specifications
Designed from the ground up for high-volume 2D TMD manufacturing — precision, reliability, and serviceability built in at every layer.
